![]() 75 conducted studies assessing the impact of loud versus quiet background white noise (7585 dB versus 4555 dB) on the perception of sweetness, sourness and liking for a variety of foods. The method in this paper can provide a reference for performance evaluation in HgCdTe APDs, as well as guidance for designing or optimizing the structure. This would also explain why many report more visual snow in low light conditions: 'The intrinsic dark noise of primate cones is equivalent to 4000 absorbed photons per second at mean light levels below this the cone signals are dominated by intrinsic noise'. Beyond the sound of eating, incidental sounds playing in the background can also influence our taste perception. Therefore, suppressing the BBT current by an appropriate annealing process was one possibility to reduce dark current and noise in devices. Especially within the auditory system, recent studies suggest that intrinsic noise plays a key role in signal. However, in the context of stochastic resonance, noise has been shown to improve signal detection of weak sub- threshold signals, and it has been proposed that the brain might actively exploit this phenomenon. The bias-dependent dark noise was further studied, and we supposed that the BBT component might partially undergo avalanche multiplication in our LWIR devices. Noise is generally considered to harm information processing performance. We obtained a low F = 1– ( M) = 6 at −2 V and extended the F to a higher gain ( M = 23 at −3 V). Considering the difficulty of evaluating excess noise factor F at high gains due to the rapid increase in band-to-band tunneling (BBT) current, the effects of BBT on the F measurements were discussed, by means of noise power spectral density (PSD) and noise figure meter. The parameters in the Okuto-Crowell model were obtained as a function of bandgap and operation temperature, and the results showed that our theoretical model fit well with the experiment. In this paper, the temperature-dependent current–voltage (I-V) characteristics (30∼100 K) of planar ( n +/n -/p) long-wavelength infrared (LWIR, cutoff-wavelength λ c = 11.5 μm at 80 K) HgCdTe avalanche photodiodes (APDs) device were measured and numerical simulated.
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